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Ddr4 sdram samsung

(40 productos disponibles)

Memoria RAM DDR4 SDRAM Original K4A8G165WC-BCWE de 8Gb, 3200Mbps, FBGA-96, Samsung - Product Image 1

Memoria RAM DDR4 SDRAM Original K4A8G165WC-BCWE de 8Gb, 3200Mbps, FBGA-96, Samsung - Product Image 2

Memoria RAM DDR4 SDRAM Original K4A8G165WC-BCWE de 8Gb, 3200Mbps, FBGA-96, Samsung - Product Image 3

Memoria RAM DDR4 SDRAM Original K4A8G165WC-BCWE de 8Gb, 3200Mbps, FBGA-96, Samsung - Product Image 4

Memoria RAM DDR4 SDRAM Original K4A8G165WC-BCWE de 8Gb, 3200Mbps, FBGA-96, Samsung - Product Image 5

Memoria RAM DDR4 SDRAM Original K4A8G165WC-BCWE de 8Gb, 3200Mbps, FBGA-96, Samsung - Product Image 6

Memoria RAM DDR4 SDRAM Original K4A8G165WC-BCWE de 8Gb, 3200Mbps, FBGA-96, Samsung

EUR 0.089

MOQ: 1 unidad

GXT (HK) TRADE TECHNOLOGY CO., LIMITED

1 yrs

HK

Nuevo Original K4A8G165WC-BCTD 8Gb DDR4 SDRAM - 512M x 16, 2666Mbps, 1.2V, FBGA-96 - Product Image 1

Nuevo Original K4A8G165WC-BCTD 8Gb DDR4 SDRAM - 512M x 16, 2666Mbps, 1.2V, FBGA-96 - Product Image 2

Nuevo Original K4A8G165WC-BCTD 8Gb DDR4 SDRAM - 512M x 16, 2666Mbps, 1.2V, FBGA-96 - Product Image 3

Nuevo Original K4A8G165WC-BCTD 8Gb DDR4 SDRAM - 512M x 16, 2666Mbps, 1.2V, FBGA-96 - Product Image 4

Nuevo Original K4A8G165WC-BCTD 8Gb DDR4 SDRAM - 512M x 16, 2666Mbps, 1.2V, FBGA-96 - Product Image 5

Nuevo Original K4A8G165WC-BCTD 8Gb DDR4 SDRAM - 512M x 16, 2666Mbps, 1.2V, FBGA-96 - Product Image 6

Nuevo Original K4A8G165WC-BCTD 8Gb DDR4 SDRAM - 512M x 16, 2666Mbps, 1.2V, FBGA-96

EUR 0.089

MOQ: 1 unidad

GXT (HK) TRADE TECHNOLOGY CO., LIMITED

1 yrs

HK

Memoria M393A2K40CB2-CTD de 16 GB (1x16 GB) 2666 MHz PC4-21300 CL19 ECC Registrada de Rango Único X4 1.2V DDR4 SDRAM de 288 Pines M393A2K40 - Product Image 1

Memoria M393A2K40CB2-CTD de 16 GB (1x16 GB) 2666 MHz PC4-21300 CL19 ECC Registrada de Rango Único X4 1.2V DDR4 SDRAM de 288 Pines M393A2K40 - Product Image 2

Memoria M393A2K40CB2-CTD de 16 GB (1x16 GB) 2666 MHz PC4-21300 CL19 ECC Registrada de Rango Único X4 1.2V DDR4 SDRAM de 288 Pines M393A2K40 - Product Image 3

Memoria M393A2K40CB2-CTD de 16 GB (1x16 GB) 2666 MHz PC4-21300 CL19 ECC Registrada de Rango Único X4 1.2V DDR4 SDRAM de 288 Pines M393A2K40 - Product Image 4

Memoria M393A2K40CB2-CTD de 16 GB (1x16 GB) 2666 MHz PC4-21300 CL19 ECC Registrada de Rango Único X4 1.2V DDR4 SDRAM de 288 Pines M393A2K40 - Product Image 5

Memoria M393A2K40CB2-CTD de 16 GB (1x16 GB) 2666 MHz PC4-21300 CL19 ECC Registrada de Rango Único X4 1.2V DDR4 SDRAM de 288 Pines M393A2K40 - Product Image 6

Memoria M393A2K40CB2-CTD de 16 GB (1x16 GB) 2666 MHz PC4-21300 CL19 ECC Registrada de Rango Único X4 1.2V DDR4 SDRAM de 288 Pines M393A2K40

EUR 57.81-138.74

MOQ: 2 unidades

Mika Garment Co., Ltd.

1 yrs

TH

Nuevo Stock Original K4A8G165WB-BCRC DDR4 SDRAM - 8Gb (512M x 16) 2400Mbps B-die, 1.2V, Paquete 96-FBGA - Product Image 1

Nuevo Stock Original K4A8G165WB-BCRC DDR4 SDRAM - 8Gb (512M x 16) 2400Mbps B-die, 1.2V, Paquete 96-FBGA - Product Image 2

Nuevo Stock Original K4A8G165WB-BCRC DDR4 SDRAM - 8Gb (512M x 16) 2400Mbps B-die, 1.2V, Paquete 96-FBGA - Product Image 3

Nuevo Stock Original K4A8G165WB-BCRC DDR4 SDRAM - 8Gb (512M x 16) 2400Mbps B-die, 1.2V, Paquete 96-FBGA - Product Image 4

Nuevo Stock Original K4A8G165WB-BCRC DDR4 SDRAM - 8Gb (512M x 16) 2400Mbps B-die, 1.2V, Paquete 96-FBGA - Product Image 5

Nuevo Stock Original K4A8G165WB-BCRC DDR4 SDRAM - 8Gb (512M x 16) 2400Mbps B-die, 1.2V, Paquete 96-FBGA - Product Image 6

Nuevo Stock Original K4A8G165WB-BCRC DDR4 SDRAM - 8Gb (512M x 16) 2400Mbps B-die, 1.2V, Paquete 96-FBGA

EUR 0.089

MOQ: 1 unidad

GXT (HK) TRADE TECHNOLOGY CO., LIMITED

1 yrs

HK

Chip de Memoria DRAM K4A8G045WD-BCWE DDR4-3200MHz 2Gx4 (8GB) para Samsung - Product Image 1

Chip de Memoria DRAM K4A8G045WD-BCWE DDR4-3200MHz 2Gx4 (8GB) para Samsung - Product Image 2

Chip de Memoria DRAM K4A8G045WD-BCWE DDR4-3200MHz 2Gx4 (8GB) para Samsung - Product Image 3

Chip de Memoria DRAM K4A8G045WD-BCWE DDR4-3200MHz 2Gx4 (8GB) para Samsung - Product Image 4

Chip de Memoria DRAM K4A8G045WD-BCWE DDR4-3200MHz 2Gx4 (8GB) para Samsung - Product Image 5

Chip de Memoria DRAM K4A8G045WD-BCWE DDR4-3200MHz 2Gx4 (8GB) para Samsung - Product Image 6

Chip de Memoria DRAM K4A8G045WD-BCWE DDR4-3200MHz 2Gx4 (8GB) para Samsung

EUR 1.78-2.67

MOQ: 1,000 unidades

Hyllsi Technology Co., Limited

1 yrs

H5AN8G4NMFR 512GB PM9A1 PCIe 4.0 NVMe M.2 SSD OEM Unidad de Estado Sólido Interna para Samsung - Product Image 1

H5AN8G4NMFR 512GB PM9A1 PCIe 4.0 NVMe M.2 SSD OEM Unidad de Estado Sólido Interna para Samsung - Product Image 2

H5AN8G4NMFR 512GB PM9A1 PCIe 4.0 NVMe M.2 SSD OEM Unidad de Estado Sólido Interna para Samsung - Product Image 3

H5AN8G4NMFR 512GB PM9A1 PCIe 4.0 NVMe M.2 SSD OEM Unidad de Estado Sólido Interna para Samsung - Product Image 4

H5AN8G4NMFR 512GB PM9A1 PCIe 4.0 NVMe M.2 SSD OEM Unidad de Estado Sólido Interna para Samsung - Product Image 5

H5AN8G4NMFR 512GB PM9A1 PCIe 4.0 NVMe M.2 SSD OEM Unidad de Estado Sólido Interna para Samsung - Product Image 6

H5AN8G4NMFR 512GB PM9A1 PCIe 4.0 NVMe M.2 SSD OEM Unidad de Estado Sólido Interna para Samsung

EUR 0.8894-1.78

MOQ: 1,000 unidades

Hyllsi Technology Co., Limited

1 yrs

K4A4G165WE-BCTD 96FBGA 0.5GB DDR SDRAM Chip de Memoria IC Circuitos Integrados Componentes Electrónicos Nuevo - Product Image 1

K4A4G165WE-BCTD 96FBGA 0.5GB DDR SDRAM Chip de Memoria IC Circuitos Integrados Componentes Electrónicos Nuevo - Product Image 2

K4A4G165WE-BCTD 96FBGA 0.5GB DDR SDRAM Chip de Memoria IC Circuitos Integrados Componentes Electrónicos Nuevo - Product Image 3

K4A4G165WE-BCTD 96FBGA 0.5GB DDR SDRAM Chip de Memoria IC Circuitos Integrados Componentes Electrónicos Nuevo - Product Image 4

K4A4G165WE-BCTD 96FBGA 0.5GB DDR SDRAM Chip de Memoria IC Circuitos Integrados Componentes Electrónicos Nuevo - Product Image 5

K4A4G165WE-BCTD 96FBGA 0.5GB DDR SDRAM Chip de Memoria IC Circuitos Integrados Componentes Electrónicos Nuevo - Product Image 6

K4A4G165WE-BCTD 96FBGA 0.5GB DDR SDRAM Chip de Memoria IC Circuitos Integrados Componentes Electrónicos Nuevo

EUR 0.089

MOQ: 1 unidad

HONG KONG TWIN CITY ELECTRONICS CO., LIMITED

1 yrs

HK

Unidad de Estado Sólido para MZ-V8V500BW, SSD de 500 GB, 980 NVMe M.2 PCIe Gen 3.0 X4, 3 bits MLC, Encriptación de 256 bits - Product Image 1

Unidad de Estado Sólido para MZ-V8V500BW, SSD de 500 GB, 980 NVMe M.2 PCIe Gen 3.0 X4, 3 bits MLC, Encriptación de 256 bits - Product Image 2

Unidad de Estado Sólido para MZ-V8V500BW, SSD de 500 GB, 980 NVMe M.2 PCIe Gen 3.0 X4, 3 bits MLC, Encriptación de 256 bits - Product Image 3

Unidad de Estado Sólido para MZ-V8V500BW, SSD de 500 GB, 980 NVMe M.2 PCIe Gen 3.0 X4, 3 bits MLC, Encriptación de 256 bits - Product Image 4

Unidad de Estado Sólido para MZ-V8V500BW, SSD de 500 GB, 980 NVMe M.2 PCIe Gen 3.0 X4, 3 bits MLC, Encriptación de 256 bits - Product Image 5

Unidad de Estado Sólido para MZ-V8V500BW, SSD de 500 GB, 980 NVMe M.2 PCIe Gen 3.0 X4, 3 bits MLC, Encriptación de 256 bits - Product Image 6

Unidad de Estado Sólido para MZ-V8V500BW, SSD de 500 GB, 980 NVMe M.2 PCIe Gen 3.0 X4, 3 bits MLC, Encriptación de 256 bits

EUR 548.71

MOQ: 5 unidades

Crystal Drink Co., Ltd.

1 yrs

TH